Randall Feenstra M.

Porous Silicon Carbide and Gallium Nitride

Информация о книге:

Автор книги: Randall Feenstra M.

Издательство: John Wiley & Sons Limited

Серия:

Год издания: 0

isbn: 9780470751824

Аннотация:

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Скачать книгу