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Handbook of Aggregation-Induced Emission, Volume 2


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layer, and cathode, respectively. The device emits at 482 nm with a turn‐on voltage (Von), a maximum luminescence (Lmax), and an external quantum efficiency (EQE) of 3.7 V, 17 459 cd/m2 and 2.88%, respectively (Table 1.1, Device I). Although a high‐lying highest occupied molecular orbital energy level (−5.04 eV) of TPP–TPA is evaluated by cyclic voltammetry, a simplified double‐layer device without the hole‐transporting layer (TPP–TPA is expected to act as both light‐emitting and hole‐transporting layers) does not show an improved device performance [50].

Schematic illustration of molecular structures of TPP–TPA and TPP–PPI.
λ EL (nm) V on a (V) Lmaxb (cd/m2) ηCb (lm/W) ηPb (lm/W) EQEb (%) CIE (x, y)b
TPP–TPA (I) 482 3.7 17 459 5.49 3.18 2.88
TPP–TPA (II) 472 2.8 19 170 6.57 6.55 4.08 0.15, 0.21
TPP–PPI 474c 2.9 16 460 8.34 8.18 4.85 0.16, 0.23c

      a V on = turn‐on voltage at 1 cd/m2.

      b The maximum luminescence (Lmax), current efficiency (ηC), power efficiency (ηP), and external quantum efficiency at the maximum values for the devices.

      c Data recorded at a luminescence of 1000 cd/m2.

      It was later reported that TPP derivatives with a D–A structure possess a planarized intramolecular charge transfer (PLICT) effect in the excited state in the polar media. For example, the ΦF of TPP–TPA in toluene, ethyl acetate, dichloromethane, and DMF changes from 22.7, 50.9, 80.7 to 80.9% as the polarity of the solvent increases. It is due to the formation of planarization conformation or quinone conformation with a good conjugation in the excited state to increase the probability of transition. In that work, another TPP–TPA‐based blue OLED (configuration: ITO/HATCN (5 nm)/TAPC (40 nm)/TCTA (5 nm)/TPP–TPA (20 nm)/Bepp2 (45 nm)/Liq (2 nm)/Al) is fabricated with HATCN (2,3,6,7,10,11‐hexacyano‐1,4,5,8,9,12‐hexaazatriphe‐nylene), TAPC (1,1‐bis(4‐di‐p‐tolylaminophenyl)cyclohexane), TCTA (4,4′,4′′‐tri‐9‐carbazolytriphenylamine), and Bepp2 (bis(2‐(2‐hydroxyphenyl)‐pyridine)beryllium) functioned as hole‐injecting layer, hole‐transporting layer, hole‐transporting and electron‐blocking layer, and electron‐transporting and hole‐blocking layer, respectively. However, a very good device performance with Von, Lmax, and EQE of 2.8 V, 19 170 cd/m2, and 4.08%, respectively, is obtained (Table 1.1, Device II) [51].

      The PLICT effect also takes places in phenanthroimidazole derivative‐modified TPP (TPP–PPI), though the phenanthroimidazole‐based group is not so electron‐donating (Chart 1.2). TPP‐PPI shows the AIE effect in THF/water mixtures and emits at 470 nm in the film with ΦF of 28.1%. While fabricating it into the device with a configuration of ITO/HATCN (5 nm)/NPB (40 nm)/TcTa (5 nm)/TPP–PPI (20 nm)/TPBi (40 nm)/LiF (1 nm)/Al, an excellent device performance of Von (2.9 V), Lmax (16 460 cd/m2), and EQE (4.85%) is achieved. It is worth noting that the theoretical limit of EQE of OLEDs fabricated with typical fluorescent materials is 5%. Thus, it demonstrates the huge potential of developing OLEDs with TPP‐based luminescent materials [52].

       1.3.2 Fluorescent Sensors

Schematic illustration of fluorescent detection of H2S by TPP-PDCV.

      The