Defects in Functional Materials. Группа авторов

[35] Y. Xia, et al. Quantum confined Tomonaga-Luttinger liquid in MoSe₂ twin domain boundaries, arXiv: 1908.09259 (2019).

       [36] O. Lehtinen, et al., Atomic scale microstructure and properties of Se-deficient two-dimensional MoSe₂, ACS Nano. 9, 3274–3283 (2015).

       [37] J. V. Lauritsen, et al., Size-dependent structure of MoS₂ nanocrystals, Nat. Nanotechnol. 2, 53–58 (2007).

       [38] Y. Wang, et al., Monolayer PtSe₂, a new semiconducting transition-metal-dichalcogenide, epitaxially grown by direct selenization of Pt. Nano. Lett. 15, 4013–4018 (2015).

       [39] J. Lin, S. T. Pantelides, W. Zhou, Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer, ACS Nano. 9, 5189–5197 (2015).

[40] B. Feng, et al., Experimental realization of two-dimensional boron sheets, Nat. Chem. 8, 563–568 (2016).

       [41] S. Barja, et al., Charge density wave order in 1D mirror twin boundaries of single-layer MoSe₂, Nat. Phys. 12, 751–756 (2016).

[42] J. Hong, C. Wang, H. Liu, X. Ren, J. Chen, G. Wang, J. Jia, M. Xie, C. Jin, W. Ji, J. Yuan, Z. Zhang, Inversion domain boundary induced stacking and bandstructure diversity in bilayer MoSe₂, Nano. Lett. 17, 6653–6660 (2017).

[43] C. Zhang, C. P. Chuu, X. Ren, M. Li, L. J. Li, C. Jin, M. Y. Chou, C. K. Shih, Interlayer couplings, Moire patterns, and 2D electronic superlattices in MoS₂/WSe₂ hetero-bilayers, Sci. Adv. 3, e1601459 (2017).