Narayanaswamy Balakrishnan

Accelerated Life Testing of One-shot Devices


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SSALTs are an alternative to apply stress to devices in a way that stress levels will increase at prespecified times step‐by‐step. For SSALTs, there are three fundamental models for the effect of increased stress levels on the lifetime distribution of a device: The tampered random variable model proposed by DeGroot and Goel (1979), the cumulative exposure model of Sedyakin (1966) and Nelson (1980); see also (Nikulin and Tahir, 2013), and the tampered failure rate model proposed by Bhattacharyya and Soejoeti (1989). All these models of SSALTs have been discussed extensively by many authors. Gouno (2001) analyzed data collected from SSALTs and presented an optimal design for SSALTs; see also Gouno (2007). Zhao and Elsayed (2005) analyzed data on the light intensity of light emitting diodes collected from SSALTs with four stress levels under Weibull and log‐normal distributions. For the case of exponential lifetime distribution, by considering a simple SSALT under Type‐II censoring, Balakrishnan et al. (2007) developed exact likelihood inferential methods for the model parameters; see also Balakrishnan (2008) for details, while Xiong et al. (2006) considered the situation when the stress changes from a low‐level stress to a high‐level stress at a random time.

      1.4.1 Electro‐Explosive Devices Data

      Source: Fan et al. (2009).

Test group Inspection time Temperature Number of samples Number of failures
1 10 308 10 3
2 10 318 10 1
3 10 328 10 6
4 20 308 10 3
5 20 318 10 5
6 20 328 10 7
7 30 308 10 7
8 30 318 10 7
9 30 328 10 9

      1.4.2 Glass Capacitors Data

      1.4.3 Solder Joints Data

      Source: Zelen (1959).

Test group Inspection time Temperature Voltage Number of samples Number of failures
1 450 443 200 8 1
2 400 453 200 8 0
3 350 443 250 8 0
4 300 453 250 8 1
5 450 443 300 8 3
6 400 453 300 8 4
7 350 443 350 8 3