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Fundamentals of Terahertz Devices and Applications


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focusing capabilities into a planar antenna. At submillimeter‐wave frequencies, planar antennas suffer from high power loss due to the excitation of multiple surface wave modes on thick dielectric substrates. When a radiating source is placed on a dielectric surface, the rays propagate through the dielectric reaching the dielectric‐air interface. At that point, the rays that reach the substrate edge with an angle above the critical angle, defined as θc = a sin(1/nsubs) being nsubs the refraction index of the substrate, are reflected back into the substrate generating reflections along the transversal axis of the dielectric (see Figure 2.1a). These are trapped waves that do not radiate into free space; thus they represent an efficiency loss.

      Source: Modified from Rutledge et al.[27]; John Wiley & Sons.

      One way to mitigate this loss is to reduce the thickness of the substrate until it is electrically thin (≈λsubs/100, being λsubs the wavelength in the substrate λsubs = λ0/nsubs) as in [28, 29] but at the cost of a poor front to back radiation. The antenna is integrated on a thin dielectric membrane which is typically less than 5 μm thick and realized on silicon, SiN, or SiO2 dielectrics. These antennas will couple weakly to the substrate and they will radiate the same amount of energy in the front and back hemispheres as if they were suspended in free space. In Ref. [30], a membrane of 1 μm of SiN was fabricated for an antenna working at 700 GHz.

      Another approach is to use a thick substrate together with a lens of the same material to couple efficiently the radiation into free space as proposed by Kominami et al. [31]. The antenna is placed between two infinite mediums, one on the top and one on the bottom, and the top of the dielectric medium is curved in order to couple the radiation into a directive beam without having critical angle reflections. The front‐to‐back ratio of an elementary dipole planar antenna between the two mediums can be approximated as ηfront‐to‐backimages [27]. Silicon and quartz are two of the materials that are used for the fabrication of integrated lenses due to their low dielectric loss and still high front‐to‐back ratios. As shown in Figure 2.1b, when using a dielectric of silicon (εr ≈ 11.9) the power radiated to the silicon is around 97.5% of the power radiated to the air, while if the lens is quartz (εr ≈ 4), the power radiated is around 87.5%. The lens is put on the backside of the antenna on the substrate radiates most of their power into the dielectric side making the pattern unidirectional and also providing thermal and mechanical stability.

      2.2.1 Elliptical Lens Synthesis

Schematic illustration of geometrical parameters of an elliptical lens.

      And we can also equate the projection in the z‐axis of these rays:

      (2.3)equation

      (2.4)equation

      On the other hand, we know that an elliptical lens geometry can be described in polar coordinates using the following expression:

      where a and e are the semi‐major axis and eccentricity, respectively (see Figure 2.2b).

      (2.6)equation

      we can conclude that a spherical wave front produced by an antenna at the focus point of a lens of with an ellipsoidal shape will be transformed into a planar waveform. The antenna is placed at the second focus of an ellipse defined by the equation:

      (2.9)equation

      (2.10)equation

      and the semi‐minor axis b as:

      (2.11)equation

      The